On Thu, 24 Nov 2005 14:47:37 -0500, Phil Hobbs
wrote:

John Larkin wrote:

A 1N4007 can also be used as a drift step-recovery diode and as a
plasma avalanche diode. Together, two can generate a kilovolt edge
with a 100 ps risetime.

Okay, so I'm intrigued already. I have all the hardware available--two
1N4007s and a 3 kV adjustable power supply! How do I build one?

Cheers,

Phil Hobbs

Google "Grekhov diode." A lot of the papers are for members only, but
this one gives the general idea:

http://www.ece.jhu.edu/~pps/ECE777/A...ano-pulse1.pdf

Grekhov discovered both the DSRD and the plasma avalanche effects in
cheap power diodes. The core of the DSRD effect is that, if a PIN
diode is forward biased for not too many nanoseconds, the carriers
don't have time to float all around the place so the charge profile is
good for a nice reverse snap. HP did the same thing in their classic
1430 12-GHz sampling head, circa 1965 roughly.

This box used the DSRD effect, in a semiconductor that one would not
expect to be used in an application like this...

http://www.highlandtechnology.com/DSS/T220DS.html

We bias the snap diode +48 volts (yes, forward direction) for about 80
ns before we turn the drive around for the snap. It was originally
designed for use in a LEAP atom probe.

John