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#1
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Hi:
i've found out from my reading that pin diodes are only used as attns and switches down to about 10MHz. i'm wondering if i can use another type of diode as an attn or switch at lower freqs. i don't recall ever hearing that. i think i've seen common diodes (maybe gen purpose signal diodes) as RF switches and the passive DBM can be used as an attn, though i'm not sure about the freq range for the DBM attn. BTW i've got the HP app notes on pin diodes, but there's no info there pertaining to my question. out of all the circuits i've seen, i'm beginning to think i'm stuck with things like dual gate MOSFETs for attnuation. or bipolars driven into the non-linear region. maybe JFETs or MOSFETS as analog switches. i'll need to go down to 3MHz for now, but i'm interested in going lower and what the practical solution is for different freq ranges. any suggestions would be greatly appreciated. thanks mike c |
#2
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![]() "Active8" wrote in message ... Hi: i've found out from my reading that pin diodes are only used as attns and switches down to about 10MHz. Where'd you get that idea? Back in 1975 I was using PIN diode T/R switching and a bridged T PIN diode voltage variable attenuator in a military HF transceiver (100W TX 2-30 MHx frequency coverage). Both the T/R switching and the RX attenuator (in front of the 1st mixer at RF) worked fine. In fact, the RX would take 2 tones 3 kHz apart at 300,000 uV each and the 3rd order IM products were down 55dB or better. The key to using PIN diodes at HF is to select PIN diodes with a long (say 2usec) "minority carrier lifetime" (necessary to minimize distortion on lower freq signals. At the time "Unitrode" made the diodes I was using ... but they may have been acquired by someone else, I can't recall for sure because I haven't been in the market for such diodes for some time. i'm wondering if i can use another type of diode as an attn or switch at lower freqs. i don't recall ever hearing that. i think i've seen common diodes (maybe gen purpose signal diodes) as RF switches and the passive DBM can be used as an attn, though i'm not sure about the freq range for the DBM attn. PIN diodes are the best for RF switching ... other diodes will switch, but don't have the same distortion characteristics. BTW .. the common 1N4007 rectifier diode has a PIN structure and has been used by many with some success in switching HF signals, but I don't know offhand what maximum RF power level that particular part will handle. (though I suspect it should be fairly respectable, since the part is rated as a 1 Amp rectifier, IIRC.) Also note that AFAIK, the 1N4007 is the ONLY part in the 1N400x series that has a PIN structure. BTW i've got the HP app notes on pin diodes, but there's no info there pertaining to my question. HP makes some very nice parts for lower powers and also for higher frequency use, but I'm not sure that they make a part that's capable of handling something like 100W of RF at 2-30 MHz. One thing to keep in mind ... the more switching (forward bias) current used to make the PIN diode conduct, and the higher the reverse voltage used to reverse bias it to turn it off HARD, the lower the distortion created (within the current and reverse voltage ratings of the diode, of course). IIRC, in 1975 I was using something like 10mA of forward bias for the diodes in the RX leg and about 500mA for the diodes in the TX leg of the T/R switch and the reverse bias was the full supply voltage of 12 or 28 volts, depending on which primary voltage the particular model of the radio was intended for ... I hope this information is of some help. 73, Carl - wk3c |
#3
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![]() "Active8" wrote in message ... Hi: i've found out from my reading that pin diodes are only used as attns and switches down to about 10MHz. Where'd you get that idea? Back in 1975 I was using PIN diode T/R switching and a bridged T PIN diode voltage variable attenuator in a military HF transceiver (100W TX 2-30 MHx frequency coverage). Both the T/R switching and the RX attenuator (in front of the 1st mixer at RF) worked fine. In fact, the RX would take 2 tones 3 kHz apart at 300,000 uV each and the 3rd order IM products were down 55dB or better. The key to using PIN diodes at HF is to select PIN diodes with a long (say 2usec) "minority carrier lifetime" (necessary to minimize distortion on lower freq signals. At the time "Unitrode" made the diodes I was using ... but they may have been acquired by someone else, I can't recall for sure because I haven't been in the market for such diodes for some time. i'm wondering if i can use another type of diode as an attn or switch at lower freqs. i don't recall ever hearing that. i think i've seen common diodes (maybe gen purpose signal diodes) as RF switches and the passive DBM can be used as an attn, though i'm not sure about the freq range for the DBM attn. PIN diodes are the best for RF switching ... other diodes will switch, but don't have the same distortion characteristics. BTW .. the common 1N4007 rectifier diode has a PIN structure and has been used by many with some success in switching HF signals, but I don't know offhand what maximum RF power level that particular part will handle. (though I suspect it should be fairly respectable, since the part is rated as a 1 Amp rectifier, IIRC.) Also note that AFAIK, the 1N4007 is the ONLY part in the 1N400x series that has a PIN structure. BTW i've got the HP app notes on pin diodes, but there's no info there pertaining to my question. HP makes some very nice parts for lower powers and also for higher frequency use, but I'm not sure that they make a part that's capable of handling something like 100W of RF at 2-30 MHz. One thing to keep in mind ... the more switching (forward bias) current used to make the PIN diode conduct, and the higher the reverse voltage used to reverse bias it to turn it off HARD, the lower the distortion created (within the current and reverse voltage ratings of the diode, of course). IIRC, in 1975 I was using something like 10mA of forward bias for the diodes in the RX leg and about 500mA for the diodes in the TX leg of the T/R switch and the reverse bias was the full supply voltage of 12 or 28 volts, depending on which primary voltage the particular model of the radio was intended for ... I hope this information is of some help. 73, Carl - wk3c |
#4
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Active8 wrote:
i've found out from my reading that pin diodes are only used as attns and switches down to about 10MHz. i'm wondering if i can use another type of diode as an attn or switch at lower freqs. i don't recall ever hearing that. i think i've seen common diodes (maybe gen purpose signal diodes) as RF switches and the passive DBM can be used as an attn, though i'm not sure about the freq range for the DBM attn. I use 1N4007 (PIN) AGC diodes in a 1.8 to 29.7 MHz homebrew ham-band receiver at IF frequencies of 8.5 MHz and 3.4 MHz. They are in shunt with an impedance level of 50 ohms. PIN diodes have an intermodulation problem when the forward bias is right at the threshold of conduction. Ordinary diodes are much worse. At higher/lower forward bias levels this effect quickly goes away. In order to assure that the 20 dBm third-order intercept point of the receiver is not degraded by this effect at the critical diode bias point, I use three 1N4007s in series at each of the three locations (verified by measurement). A picture of this receiver is at QRZ.COM (W0IYH) Bill W0IYH |
#5
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Active8 wrote:
i've found out from my reading that pin diodes are only used as attns and switches down to about 10MHz. i'm wondering if i can use another type of diode as an attn or switch at lower freqs. i don't recall ever hearing that. i think i've seen common diodes (maybe gen purpose signal diodes) as RF switches and the passive DBM can be used as an attn, though i'm not sure about the freq range for the DBM attn. I use 1N4007 (PIN) AGC diodes in a 1.8 to 29.7 MHz homebrew ham-band receiver at IF frequencies of 8.5 MHz and 3.4 MHz. They are in shunt with an impedance level of 50 ohms. PIN diodes have an intermodulation problem when the forward bias is right at the threshold of conduction. Ordinary diodes are much worse. At higher/lower forward bias levels this effect quickly goes away. In order to assure that the 20 dBm third-order intercept point of the receiver is not degraded by this effect at the critical diode bias point, I use three 1N4007s in series at each of the three locations (verified by measurement). A picture of this receiver is at QRZ.COM (W0IYH) Bill W0IYH |
#6
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#7
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#8
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Active8 wrote:
PIN diodes have an intermodulation problem when the forward bias is right at the threshold of conduction. Ordinary diodes are much worse. At higher/lower forward bias levels this effect quickly goes away. In order to assure that the 20 dBm third-order intercept point of the receiver is not degraded by this effect at the critical diode bias point, I use three 1N4007s in series at each of the three locations (verified by measurement). you mean by doing that, the chances of all the diodes switching at the threshold is reduced? The diodes are pretty much uniform, as compared to many years ago. The reason for three diodes in series is to divide the RF/IF signal voltage into three approximately equal segments. This greatly reduces the intermodulation in each diode, therefore in the set of three. I verified this with a spectrum analyzer plus tracking generator equipment. Also verified many (33) years ago. Bill W0IYH |
#9
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Active8 wrote:
PIN diodes have an intermodulation problem when the forward bias is right at the threshold of conduction. Ordinary diodes are much worse. At higher/lower forward bias levels this effect quickly goes away. In order to assure that the 20 dBm third-order intercept point of the receiver is not degraded by this effect at the critical diode bias point, I use three 1N4007s in series at each of the three locations (verified by measurement). you mean by doing that, the chances of all the diodes switching at the threshold is reduced? The diodes are pretty much uniform, as compared to many years ago. The reason for three diodes in series is to divide the RF/IF signal voltage into three approximately equal segments. This greatly reduces the intermodulation in each diode, therefore in the set of three. I verified this with a spectrum analyzer plus tracking generator equipment. Also verified many (33) years ago. Bill W0IYH |
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